论文专著


期刊与会议

2024年

Chang Liu, Pek Jun Tiw, Teng Zhang, Yanghao Wang, Lei Cai, Rui Yuan, Zelun Pan, Wenshuo Yue, Yaoyu Tao* and Yuchao Yang*, VO2 memristor-based frequency converter with in-situ synthesize and mix for wireless internet-of-things. Nature Communications, 15, 1523, 2024.

Ke Yang#, Yanghao Wang#, Pek Jun Tiw, Chaoming Wang, Xiaolong Zou, Rui Yuan, Chang Liu, Ge Li, Chen Ge, Si Wu, Teng Zhang*, Ru Huang and Yuchao Yang*, High-order sensory processing nanocircuit based on coupled VO2 oscillators. Nature Communications, 15, 1693, 2024.


2023年

  • Longhao Yan, Qingyu Wu, Xi Li, Chenchen Xie, Xilin Zhou, Yuqi Li, Daijing Shi, Lianfeng Yu, Teng Zhang, Yaoyu Tao, Bonan Yan, Min Zhong, Zhitang Song*, Yuchao Yang*, and Ru Huang*, Neural Architecture Search with In-Memory Multiply–accumulate and In-Memory Rank Based on Coating Layer Optimized C-doped Ge2Sb2Te5 Phase Change Memory. Advanced Functional Materials, 2300458, 2023.

  • Xulei Wu, Bingjie Dang, Teng Zhang, Xiulong Wu*, and Yuchao Yang*, Spatiotemporal Audio Feature Extraction with Dynamic Memristor-Based Time-Surface Neurons. Science Advances, submitted.

  • Lianfeng Yu, Yaoyu Tao*, Teng Zhang, Zeyu Wang, Xile Wang, Zelun Pan, Bowen Wang, Zhaokun Jing, Jiaxin Liu, Yuqi Li, Yihang Zhu, Bonan Yan, and Yuchao Yang*, Fast and Reconfigurable Sort-In-Memory System Enabled by Memristors. Nature Electronics, submitted.

  • Chang Liu, Pek Jun Tiw, Teng Zhang, Yanghao Wang, Lei Cai, Rui Yuan, Zelun Pan, Yaoyu Tao* and Yuchao Yang*, VO2 memristor-based frequency converter with in-situ synthesize and mix for wireless internet-of-things. Nature Communications, submitted.

  • Zhiyu Yang#, Keqin Liu#, Rui Yuan, Xulei Wu, Lei Cai, Teng Zhang, Yaoyu Tao*, Yufeng Jin and Yuchao Yang*, Seizure detection using dynamic memristor-based reservoir computing and leaky integrate-and-fire neuron for post-processing. APL Machine Learning, submitted.

  • Wenshuo Yue#, Teng Zhang#, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yibo Lin, Yaoyu Tao, Bonan Yan*, Ru Huang and Yuchao Yang*, Scalable Universal Ising Machine Enabled by Interaction-centric Storage and Compute-in-memory Technology. Nature Electronics, submitted.

  • Ke Yang#, Yanghao Wang#, Teng Zhang*, Chaoming Wang, Xiaolong Zou, Rui Yuan, Ge Li, Chen Ge, Si Wu, Ru Huang and Yuchao Yang*, High-order sensory processing nanocircuit based on coupled VO2 oscillators. Nature Communications, submitted.

  • Zhaokun Jing, Chang Liu, Kai Wu, Wenshuo Yue, Zhen Yang, Xiaobing Yan, Yuchao Yang*, and Ru Huang*, Real-Time High-Resolution Sound Source Localization Based on Neuromorphic Ion Gated Transistors with Temporal Dynamics. Nature Communications, submitted.

  • Longhao Yan, Teng Zhang, Yuze Niu, Zihan Mu, Jie Zhang, Daijing Shi, Yihang Zhu, Jing Wang, Lianfeng Yu, Yuqi Li, Song Jia, Wengao Lu, Guangyu Sun, Bonan Yan, Yaoyu Tao, Yuchao Yang*, and Ru Huang, A 4.51TOPS, 2936FPS All-Weights-on-Chip Compute-in-Memory CNN Accelerator with Inter-Tile Depth-First Scheduling and Ternary 2T2R RRAMs. VLSI, submitted.

  • Keqin Liu, Bingjie Dang, Zhiyu Yang, Teng Zhang, Zhen Yang, Jinxuan Bai, Zelun Pan, Yuchao Yang*, and Ru Huang, Tuning Ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes. Science China Information Sciences, submitted.

  • Junjie Wang#, Teng Zhang#, Shuang Liu, Yihe Liu, Yuancong Wu, Shaogang Hu, T. P. Chen, Yang Liu*, Yuchao Yang*, and Ru Huang, Design and implementation of a hybrid, ADC/DAC-free, input-sparsity-aware, precision reconfigurable RRAM processing-in-memory chip. Journal of Solid-State Circuits, DOI: 10.1109/JSSC.2023.3304174, 2023.

  • Yingming Lu and Yuchao Yang*, Memory augmented factorization for holographic representation. Nature Nanotechnology, 10.1038/s41565-023-01351-0, 2023.

  • Lei Cai, Lianfeng Yu, Wenshuo Yue, Yihang Zhu, Zhiyu Yang, Yuqi Li, Yaoyu Tao*, and Yuchao Yang*, Integrated Memristor Network for Physiological Signal Processing. Advanced Electronic Materials, 2300021, 2023.

  • Rui Yuan#, Pek Jun Tiw#, Cai Lei, Zhiyu Yang, Chang Liu, Teng Zhang, Chen Ge, Ru Huang and Yuchao Yang*, A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface. Nature Communications, 14, 3695, 2023.

  • Shaochuan Chen, Teng Zhang, Stefan Tappertzhofen*, Yuchao Yang*, and Ilia Valov*, Electrochemical memristor-based artificial neurons and synapses – fundamentals, applications, and challenges. Advanced Materials, 2301924, 2023.


2022年

  • Chang Liu, Yanghao Wang, Teng Zhang, Rui Yuan, and Yuchao Yang*, An attention mechanism based adaptive feedback computing component by neuromorphic ion gated MoS2 transistors. Advanced Electronic Materials, 2201060, 2022.

  • Keqin Liu, Teng Zhang, Bingjie Dang, Lin Bao, Liying Xu, Caidie Cheng, Zhen Yang, Ru Huang*, and Yuchao Yang*, An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing. Nature Electronics, DOI: 10.1038/s41928-022-00847-2, 2022.

  • Bingjie Dang, Keqin Liu, Xulei Wu, Zhen Yang, Liying Xu, Yuchao Yang*, and Ru Huang*, One-phototransistor-one-memristor Array with High-linearity Light-tunable Weight for Optic Neuromorphic Computing. Advanced Materials, 2204844, 2022.

  • Zhaokun Jing, Bonan Yan*, Yuchao Yang*, and Ru Huang*, VSDCA: A Voltage Sensing Differential Column Architecture Based on 1T2R RRAM Array for Computing-in-Memory Accelerators. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(10), 4028-4041, 2022.

  • Yuchao Yang* and Ilia Valov*, Rebooting Computing in Post Moore Era. Advanced Intelligent Systems, 4, 2200161, 2022.

  • Liying Xu, Jiadi Zhu, Bing Chen, Zhen Yang, Keqin Liu, Bingjie Dang, Teng Zhang, Yuchao Yang*, and Ru Huang*, A Distributed Nanocluster Based Multi-Agent Evolutionary Network System. Nature Communications, 13, 4698, 2022.

  • Rui Yuan, Qingxi Duan, Pek Jun Tiw, Ge Li, Zhuojian Xiao, Zhaokun Jing, Ke Yang, Chang Liu, Chen Ge, Ru Huang*, and Yuchao Yang*, A Calibratable Sensory Neuron Based on Epitaxial VO2 for Spike-based Neuromorphic Multisensory System. Nature Communications, 13, 3973, 2022.

  • Zhuojian Xiao, Bonan Yan, Teng Zhang, Ru Huang*, and Yuchao Yang*, Memristive Devices Based Hardware for Unlabeled Data Processing. Neuromorphic Computing and Engineering, 2, 022003, 2022.

  • Yongxin Wei, Qingxi Duan, Rui Yuan, Xiaobing Yan*, and Yuchao Yang*, Dropout neuronal unit with tunable probability based on NbOx stochastic memristor for efficient suppression of overfitting. Microelectronic Engineering, 259, 111778, 2022.

  • Suhas Kumar*, Xinxin Wang, John Paul Strachan, Yuchao Yang*, and Wei D. Lu*, Dynamical Memristors for Higher-Complexity Neuromorphic Computing. Nature Reviews Materials, https://doi.org/10.1038/s41578-022-00434-z, 2022.

  • Qingxi Duan, Teng Zhang, Chang Liu, Rui Yuan, Ge Li, Pek Jun Tiw, Ke Yang, Chen Ge, Yuchao Yang*, and Ru Huang, Artificial Multisensory Neuron with Fused Haptic and Temperature Perception for Multimodal In-Sensor Computing. Advanced Intelligent Systems, 2200039, 2022.

  • Keqin Liu, Bingjie Dang, Teng Zhang, Zhen Yang, Lin Bao, Liying Xu, Caidie Cheng, Ru Huang*, and Yuchao Yang* Multilayer Reservoir Computing Based on Ferroelectric α-In2Se3 for Hierarchical Information Processing. Advanced Materials, 2108826, 2022.

2021年

  • Zhaokun Jing, Yuchao Yang*, and Ru Huang*, Dual-Mode Dendritic Devices Enhanced Neural Network Based on Electrolyte Gated Transistors. Semiconductor Science and Technology, 37, 024002, 2021.

  • Yingming Lu, Xi Li, Bonan Yan, Longhao Yan, Teng Zhang, Zhitang Song*, Ru Huang*, and Yuchao Yang*, In-Memory Realization of Eligibility Traces Based on Conductance Drift of Phase Change Memory for Energy-Efficient Reinforcement Learning. Advanced Materials, 2107811, 2021.

  • Longhao Yan, Xi Li, Yihang Zhu, Bonan Yan, Yingming Lu, Teng Zhang, Yuchao Yang*, Zhitang Song*, and Ru Huang*, Uncertainty Quantification Based on Multilevel Conductance and Stochasticity of Heater Size Dependent C-doped Ge2Sb2Te5 PCM Chip. IEDM Tech. Dig. 605-608, 2021.

  • Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Baustista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wang, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos, Standards for the Characterization of Endurance in Resistive Switching Devices. ACS Nano DOI: 10.1021/acsnano.1c06980, 2021.

  • Xulei Wu,# Bingjie Dang,# Hong Wang, Xiulong Wu*, and Yuchao Yang*, Spike Enabled Audio Learning in Multilevel Synaptic Memristor Array Based Spiking Neural Network. Advanced Intelligent Systems, 2100151, 2021.

  • Caidie Cheng,# Pek Jun Tiw,# Yimao Cai, Xiaoqin Yan*, Yuchao Yang*, and Ru Huang*, In-memory computing with emerging nonvolatile memory devices. Science China Information Sciences, 64, 221402, 2021.

  • Ke Yang, J. Joshua Yang*, Ru Huang*, Yuchao Yang*, Nonlinearity in Memristors for Neuromorphic Dynamic Systems. Small Science, 2100049, 2021.

  • Caidie Cheng, Yanghao Wang, Liying Xu, Keqin Liu, Bingjie Dang, Yingming Lu, Xiaoqin Yan*, Ru Huang*, and Yuchao Yang*, Artificial astrocyte memristor with recoverable linearity for neuromorphic computing. Advanced Electronic Materials, 2100669, 2021.

  • Zhaokun Jing, and Yuchao Yang*, Artificial intelligence goes physical. Small Science 1(3), 2000065, 2021.

  • Yanghao Wang, Yuchao Yang*, Yue Hao*, Ru Huang*, Embracing the era of neuromorphic computing. Journal of Semiconductors 42(1), 010301, 2021.

2020年

  • Yingming Lu, Xi Li, Longhao Yan, Teng Zhang, Yuchao Yang*, Zhitang Song*, and Ru Huang*,Accelerated Local Training of CNNs by Optimized Direct Feedback Alignment Based on Stochasticity of 4 Mb C-doped Ge2Sb2Te5 PCM Chip in 40 nm Node. IEEE International Electron Devices Meeting, 797-800, 2020.

  • Bingjie Dang, Lan Ma, Longhao Yan, Saisai Wang, Keqin Liu, Liying Xu, Caidie Cheng, Momo Zhao, Yuchao Yang*, Hong Wang*, Yue Hao, and Ru Huang*, Physically Transient Optic-Neural Synapse for Secure In-Sensor Computing. IEEE Electron Device Letters, 41, 1641-1644, 2020.

  • Ke Yang, Qingxi Duan, Yanghao Wang, Teng Zhang, Yuchao Yang*, and Ru Huang*, Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems. Science Advances, 6, eaba9901, 2020.

  • Qingxi Duan, Zhaokun Jing, Xiaolong Zou, Yanghao Wang, Ke Yang, Teng Zhang, Si Wu, Ru Huang*, and Yuchao Yang*, Spiking Neurons with Spatiotemporal Dynamics and Gain Modulation for Monolithically Integrated Memristive Neural Networks. Nature Communications, 11, 3399, 2020.

  • Ilia Valov* and Yuchao Yang*, Memristors with alloyed electrodes. Nature Nanotechnology, https://doi.org/10.1038/s41565-020-0702-9, 2020.

  • Yang Zhang, Zhongrui Wang, Jiadi Zhu, Yuchao Yang, Mingyi Rao, Wenhao Song, Ye Zhuo, Xumeng Zhang, Menglin Cui, Linlin Shen, Ru Huang, and J. Joshua Yang*, Brain-inspired computing with memristors: Challenges in devices, circuits and systems. Applied Physics Reviews, 7, 011308, 2020.

  • Jiadi Zhu,# Teng Zhang,# Yuchao Yang,* and Ru Huang,* A Comprehensive Review on Emerging Artificial Neuromorphic Devices. Applied Physics Reviews, 7, 011312, 2020. (Editor's Pick)

  • Yanghao Wang, Liutao Yu, Si Wu, Ru Huang*, and Yuchao Yang*, Memristor Based Biologically Plausible Memory Based on Discrete and Continuous Attractor Networks for Neuromorphic Systems. Advanced Intelligent Systems, 2000001, 2020.

2019年

  • Jingxian Li, Yuchao Yang,* Minghui Yin, Xinhao Sun, Lidong Li,* and Ru Huang,* Electrochemical and thermodynamic processes of metal nanoclusters enabled biorealistic synapses and leaky-integrate-and-fire neurons. Materials Horizons, 7, 71-81, 2020. (Front cover)

  • B. Dang, K. Liu, J. Zhu, L. Xu, T. Zhang, C. Cheng, H. Wang, Y. Yang, Y. Hao, and R. Huang, "Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing", APL Materials 7, 071114 (2019).

  • B. Dang, J. Sun, T. Zhang, S. Wang, M. Zhao, K. Liu, L. Xu, J. Zhu, C. Cheng, L. Bao, Y. Yang, H. Wang, Y. Hao, and R. Huang, "Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications" IEEE Electron Device Letters (2019).

  • T. Zhang, K. Yang, X. Xu, Y. Cai, Y. Yang, and R. Huang, "Memristive Devices and Networks for Brain‐Inspired Computing", physica status solidi (RRL)–Rapid Research Letters (2019).

  • X. Sun, T. Zhang, C. Cheng, X. Yan, Y. Cai, Y. Yang, and R. Huang, "A Memristor Based In-memory Computing Network for Hamming Code Error Correction" IEEE Electron Device Letters (2019).

  • M. Aono, C. Baeumer, P. Bartlett, S. Brivio, G. Burr, M. Burriel, E. Carlos, S. Deswal, J. Deuermeier, R. Dittmann, H. Du, E. Gale, S. Hambsch, H. Hilgenkamp, D. Ielmini, A. J Kenyon, A. Kiazadeh, A. Kindsmüller, G. Kissling, I. Köymen, S. Menzel, D. Pla Asesio, T. Prodromakis, M. Santamaria, A. Shluger, D. Thompson, I. Valov, W. Wang, R. Waser, R. S. Williams, D. Wrana, D. Wouters, Y. Yang, A. Zaffora, "Valence change ReRAMs (VCM)-Experiments and modelling: general discussion" Faraday discussions 213, 259-286 (2019).

  • E. Ambrosi, P. Bartlett, A. I. Berg, S. Brivio, G. Burr, S. Deswal, J. Deuermeier, M.-a. Haga, A. Kiazadeh, G. Kissling, M. Kozicki, C. Foroutan-Nejad, E. Gale, Y. Gonzalez-Velo, A. Goossens, L. Goux, T. Hasegawa, H. Hilgenkamp, R. Huang, S. Ibrahim, D. Ielmini, A. J. Kenyon, V. Kolosov, Y. Li, S. Majumdar, G. Milano, T. Prodromakis, N. Raeishosseini, V. Rana, C. Ricciardi, M. Santamaria, A. Shluger, I. Valov, R. Waser, R. S. Williams, D. Wouters, Y. Yang, and A. Zaffora, "Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion" Faraday discussions 213, 115-150 (2019).

  • K. Liu, L. Qin, X. Zhang, J. Zhu, X. Sun, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Interfacial redox processes in memristive devices based on valence change and electrochemical metallization" Faraday Discussions 213, 41-52 (2019).

  • Q. Chen, Z. Wang, M. Yu, Y. Fang, Z. Yu, Y. Yang, Y. Cai, and R. Huang, "Thermal effect in ultra-high density 3-dimensional vertical and horizontal RRAM array" Physica Scripta (2019).

  • L. Xu, R. Yuan, Z. Zhu, K. Liu, Z. Jing, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications" Advanced Materials Technologies, 1, 1900212 (2019).

  • Q. Chen, M. Lin, Z. Wang, X. Zhao, Y. Cai, Q. Liu, Y. Fang, Y. Yang, M. He, and Ru Huang, "Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications" Advanced Electronic Materials 5, 1800852 (2019).

  • A. I. Berg, S. Brivio, S. Brown, G. Burr, S. Deswal, J. Deuermeier, E. Gale, H. Hwang, D. Ielmini, G. Indiveri, A. J. Kenyon, A. Kiazadeh, I. Köymen, M. Kozicki, Y. Li, D. Mannion, T. Prodromakis, C. Ricciardi, S. Siegel, M. Speckbacher, I. Valov, W. Wang, R. S. Williams, D. Wouters, and Y. Yang, "Synaptic and neuromorphic functions: general discussion", Faraday discussions 213, 553-578 (2019).

  • M. Lanza, H.‐S. P. Wong, E. Pop, D. Ielmini, D. Strukov, B. C. Regan, L. Larcher, M. A. Villena, J. J. Yang, L. Goux, A. Belmonte, Y. Yang, F. M. Puglisi, J. Kang, B. Magyari‐Köpe, E. Yalon, A. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.‐H. Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J. B. Roldan, E. Miranda, J. Suñe, K. L. Pey, X. Wu, N. Raghavan, E. Wu, W. D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M. C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, and Y. Shi, "Recommended methods to study resistive switching devices" Advanced Electronic Materials 5, 1800143 (2019).

2018年

  • Y. Ling, Z. Wang, Y. Fang, J. Kang, L. Wu, Y. Yang, Y. Cai, and R. Huang, "RTN impacts on RRAM-based Nonvolatile logic circuit" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

  • L. Wu, Z. Wang, Y. Fang, Z. Yu, J. Kang, Q. Chen, Y. Yang, Z. Ji, Y. Cai, and R. Huang, "Study on High-Resistance State Instability of TaOx-Based RRAM" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

  • L. Xu, L. Bao, T. Zhang, K. Yang, Y. Cai, Y. Yang, and R. Huang, "Nonvolatile memristor as a new platform for non-von Neumann computing" 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

  • C. Cheng, Y. Li, T. Zhang, Y. Fang, J. Zhu, K. Liu, L. Xu, Y. Cai, X. Yan, Y. Yang, and R. Huang, "Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity" Journal of Applied Physics 124, 152103 (2018).

  • L. Bao, J. Kang, Y. Fang, Z. Yu, Z. Wang, Y. Yang, Y. Cai, and R. Huang, "Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons" Scientific reports 8, 13727 (2018).

  • Q. Chen, M. Lin, Y. Fang, Z. Wang, Y. Yang, J. Xu, Y. Cai, and R. Huang, " Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application" Science China Information Sciences 61, 060411 (2018).

  • Y. Fang, Z. Yu, Z. Wang, T. Zhang, Y. Yang, Y. Cai, and R. Huang, "Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer" IEEE Electron Device Letters 39, 819-822 (2018).

  • Y. Yang, and R. Huang, "Probing memristive switching in nanoionic devices" Nature Electronics 1, 274-287 (2018).

  • J. Zhu, Y. Yang, R. Jia, Z. Liang, W. Zhu, Z. Ur Rehman, L. Bao, X. Zhang, Y. Cai, L. Song, and R. Huang, "Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics" Advanced Materials 30, 1800195 (2018).

  • L. Bao, Y. Fang, Z. Wang, J. Kang, Y. Yang, J. Xu, Y. Cai, and R. Huang, "Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations" 2018 China Semiconductor Technology International Conference (CSTIC), 1-3

  • J. Li, T. Zhang, Q. Duan, L. Li, Y. Yang, and R. Huang, "Engineering resistive switching behavior in TaOx based memristive devices for non-von Neuman computing applications" Semiconductor Technology International Conference (CSTIC), 2018 China, 1-3

  • Q. Duan, L. Xu, J. Zhu, X. Sun, Y. Yang, and R. Huang, "Resistive switching and synaptic plasticity in HfO2-based memristors with single-layer and bilayer structures" 2018 China Semiconductor Technology International Conference (CSTIC), 1-3

  • C. Wang, H. Wu, B. Gao, T. Zhang, Y. Yang, and H. Qian, "Conduction mechanisms, dynamics and stability in ReRAMs" Microelectronic Engineering 187, 121-133 (2018).

2017年

  • J. Kang, Z. Yu, L. Wu, Y. Fang, Z. Wang, Y. Cai, Z. Ji, J. Zhang, R. Wang, Y. Yang, and R. Huang, "Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition" 2017 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4

  • Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon, "Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices" Journal of Electroceramics 39, 73-93 (2017).

  • Y. Yang, "Memristors for Memory and Computing Applications" Information Storage System and Technology, ISu4B. 1 (2017).

  • X. Lv, Y. Cai, Y. Yang, Z. Yu, Y. Fang, Z. Wang, L. Wu, J. Liu, W. Zhang, and R. Huang, "A neural network circuit with associative learning and forgetting process based on memristor neuromorphic device" 2017 IEEE 12th International Conference on ASIC (ASICON), 211-214

  • Q. Duan, T. Zhang, M. Yin, C. Cheng, L. Xu, Y. Yang, and R. Huang, "Switching dynamics and computing applications of memristors: An overview" 2017 IEEE 12th International Conference on ASIC (ASICON), 144-147

  • T. Zhang, M. Yin, C. Xu, X. Lu, X. Sun, Y. Yang, R. Huang, " High-speed true random number generation based on paired memristors for security electronics" Nanotechnology 28, 455202 (2017).

  • M. Lin, Q. Chen, Z. Wang, Y. Fang, J. Liu, Y. Yang, W. Wang, Y. Cai, and R. Huang, "Flexible Polymer Device Based on Parylene-C with Memory and Temperature Sensing Functionalities" Polymers 9, 310 (2017).

  • Y. Yang, M. Yin, Z. Yu, Z. Wang, T. Zhang, Y. Cai, W. Lu, and R. Huang, "Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic" Advanced Electronic Materials 3, 1700032 (2017).

  • Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, and R. Huang, "Probing nanoscale oxygen ion motion in memristive systems." Nature communications 8, 15173 (2017).

  • Y. Zhao, C. Wu, Q. Huang, C. Chen, J. Zhu, L. Guo, R. Jia, Z. Lv, Y. Yang, M. Li, and R. Huang, "A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High Ratio" IEEE Electron Device Letters 38 , 540-543 (2017).

  • T. Zhang, M. Yin, X. Lu, Y. Cai, Y. Yang, and R. Huang, "Tolerance of intrinsic device variation in fuzzy restricted Boltzmann machine network based on memristive nano-synapses" Nano Futures 1, 015003 (2017).

  • J. Li, Q. Duan, T. Zhang, M. Yin, X. Sun, Y. Cai, L. Li, Y. Yang, and R. Huang, "Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses" RSC Advances 7, 43132-43140 (2017).

2016年

  • M. Yin, Y. Yang, Z. Wang, T. Zhang, Y. Fang, X. Yang, Y. Cai, and R. Huang, "TaOx based memristors with recessed bottom electrodes and built-in ion concentration gradient as electronic synapses"2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

  • Y. Yang, and W. Lu, "Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices" IEEE Transactions on Nanotechnology 15, 465-472 (2016).

  • H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang, and C. Pan, "A Bamboo‐Like GaN Microwire‐Based Piezotronic Memristor" Advanced Functional Materials 26, 5307-5314 (2016).

  • M. Yu, Y. Fang, Z. Wang, G. Chen, Y. Pan, X. Yang, M. Yin, Y. Yang, M. Li, Y. Cai, and R. Huang, "Encapsulation layer design and scalability in encapsulated vertical 3D RRAM" Nanotechnology 27, 205202 (2016).

  • X. Yang, Y. Fang, Z. Yu, Z. Wang, T. Zhang, M. Yin, M. Lin, Y. Yang, Y. Cai, and R. Huang, "Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device" Nanoscale 8, 18897-18904 (2016).

  • Z. Wang, M. Yin, T. Zhang, Y. Cai, Y. Wang, Y. Yang, and R. Huang, "Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing" Nanoscale 8, 14015-14022 (2016).

更早时间

  • Y. Yang, B. Chen, and W. Lu, "Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity" Advanced Materials 27, 7720-7727 (2015).

  • Y. Yang, P. Gao, L. Li, X. Pan,  S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu "Electrochemical dynamics of nanoscale metallic inclusions in dielectrics" Nature  communications 5, 4232 (2014).

  • Y. Yang, J. Lee, S. Lee, C. H. Liu, Z. Zhong, and W. Lu, "Oxide Resistive Memory with Functionalized      Graphene as Built‐in Selector Element" Advanced      Materials 26, 3693-3699 (2014).

  • Y. Yang, S. Choi, and W. Lu,“Oxide heterostructure resistive memory" Nano letters 13,  2908-2915 (2013).

  • Y. Yang, P. Gao, S. Gaba, T.Chang, X. Pan, and W. Lu, "Observation of conducting filament growth      in nanoscale resistive memories" Nature communications 3, 732 (2012).

  • Y. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature-fabricated nonvolatile      resistive memory for ultrafast and high-density memory application"  Nano letters 9, 1636-1643 (2009).

期刊封面


未标题-1.jpg

Advanced Materials
Vol. 35, 2023



Advanced Materials
Vol. 34, 2022



Advanced Intelligent Systems
Vol. 4, 2022



Advanced Materials
Vol. 30, 2018



Materials Horizons
Vol.7, 2020



Physica Status Srrl
Vol 13, 2019



专著章节

  • Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, and A. J. Kenyon, Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices, in Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations, Jennifer Rupp, Daniele Ielmini and Ilia Valov (eds.), Springer, 2022.

  • Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Leon Chua, Georgios Sirakoulis, and Andrew Adamatzky (eds.), Springer, 2018.

  • Yuchao Yang, Ting Chang and Wei Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, Ronald Tetzlaff (ed.), Springer, 2014.

  • Yuchao Yang, Wei Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, Tseung-Yuen Tseng and Simon M. Sze (eds.), American Scientific Publishers, 2012.

  • 杨玉超,吴南健,马德,黄如,“类脑计算芯片”,《中国人工智能2.0发展战略研究》,浙江大学出版社,2018。

学术会议报告

  • (Invited) “基于忆阻器的存算一体技术”, CNCC 2021, 以数据为中心的系统架构论坛(线上),深圳, 中国, 12月16-18日, 2021.

  • (Invited) “为芯片装上人类的大脑——基于忆阻器的类脑电路与芯片架构”, 腾讯专家思享会,深圳, 中国, 12月4日, 2021.

  • (Invited) “On-chip inference and multimode perception based on memristive device elements”, 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2021), Tsukuba, Japan, November 1-4, 2021.

  • (Invited) “基于忆阻器的脑启发计算系统”, 一维纳米材料学术研讨会, 北京, 中国, 8月24-26日, 2021.

  • (Invited) “Memristive Dynamics Based Hardware Primitives for Efficient Computing”, HKU EEE and IEEE HK EDSSC, Hongkong, China, August 27, 2021.

  • (Invited) “Memristive Dynamics Based Hardware Primitives for Efficient Computing”, IEEE EDS Webinar, IEEE Electron Devices Society, July 21, 2021.

  • (Invited) “类脑计算:现状、趋势与变革”, 第四期混合增强智能前沿讲习班, 西安, 中国, 7月3-4日, 2021.

  • (Invited) “Brain Inspired Hardware Primitives for Efficient Computing Applications”, 第三届中国计算与认知神经科学会议(CCCN 2021), 深圳, 中国, 6月12日, 2021.

  • (Invited) “In-memory Computing Based on Intrinsic Dynamics in Emerging Nonvolatile Memories”, 3rd International Memory Symposium, Hongkong, China, May 26-29, 2021.

  • (Short Course) “In-memory Computing Based on Emerging Nonvolatile Memories”, 2021 VLSI-TSA Symposium, Taiwan, China, April 19-22, 2021.

  • (Invited) “神经形态器件与类脑智能芯片”, 4th International Symposium on Bio, Organic & Nano Electronics (ISBONE-2021), Nanjing, China, January 8-11, 2021.

  • (Invited) “非线性忆阻神经网络”, 柔性电子青年研讨会, 南京, 中国, 12月6日, 2020.

  • (Invited) “非线性忆阻神经网络”, 武汉大学物理科学与技术学院第一届青年科学家论坛, 武汉, 中国, 11月28日, 2020.

  • (Invited) “非线性忆阻神经网络”, 北京高精尖论坛-第一届青年材料科学家论坛, 北京, 中国, 11月23日, 2020.

  • (Invited) “面向类脑智能的新原理器件与芯片”, 中国科协青年科学家论坛, 北京, 中国, 11月12日, 2020.

  • (Invited) “非线性忆阻神经网络”, 全国电子信息青年科学家论坛暨第三届半导体青年学术会议, 宁波, 中国, 10月30日, 2020.

  • (Invited) “非线性忆阻神经网络”,大湾区新兴氧化物功能材料与器件研讨会, 深圳, 中国, 10月29日, 2020.

  • (Invited) “Efficient Computing Based on Emerging Neuromorphic Devices”, 2020 MRS Fall Meeting, November 27–December 4, 2020. (virtual meeting)

  • (Invited) “Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems”, The 15th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2020), Kunming, China, Nov.3-6, 2020. (virtual meeting)

  • (Invited) “Spike encoding and processing in artificial elements for efficient computing applications”, International Workshop on Future Semiconductor Technology 2020 (IWFST 2020), Seoul (online), Korea, August 28, 2020.

  • (Invited) “基于忆阻器的神经网络芯片现状与发展建议”,国家自然科学基金委面向人工智能的新一代芯片研究交流会,北京(线上),4/7/2020.

  • (Invited) “非线性忆阻神经网络”,北京智源大会,北京(线上),6/21/2020.

  • (Invited) “神经形态器件与类脑智能系统”, 第五届全国微电子青年科技论坛, 合肥, Dec. 26–27, 2019.

  • (Invited) “Spike encoding and processing in artificial elements for efficient computing applications”, 3rd IEEE International Workshop on Future Computing (IWOFC 2019): Neuromorphic Engineering and Quantum Computing, Hangzhou, China, December 14–15, 2019.

  • (Invited) “Non-von Neumann Computing Based on Emerging Neuromorphic Devices”, Inaugural Chua Memristor Institute Conference (ICMIC 2019): Theory, Device, and Applications, Wuhan, Nov. 11–14, 2019.

  • (Invited) “Non-von Neumann Computing Based on Emerging Neuromorphic Devices”, Nature Conference on Neuromorphic Computing, Beijing, Oct. 28–30, 2019.

  • (Keynote) “神经形态器件与类脑计算”, 计算未来,创造融合 — IEEE计算机杂志中国发布会, 北京, October 12, 2019.

  • (Invited) “Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption”, 2019 13th IEEE International Conference on ASIC (ASICON), Chongqing, China, Oct. 29–Nov. 1, 2019.

  • (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, 9th International Conference on Electroceramics, Lausanne, Switzerland, Jul. 15–19, 2019.

  • (Keynote) “Artificial synapses enabling bio-inspired information processing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2019, Dresden, Germany, Jul. 08–11, 2019.

  • (Invited) “Nanoionic Devices and Networks for Neuromorphic Computing”, NANO KOREA 2019, Ilsan, Korea, July 3–5, 2019.

  • (Invited) “面向类脑智能的新原理神经形态器件”, 第二届中国认知计算与混合智能学术大会, 西安, 中国, 9月21–22日, 2019.

  • (Invited) “神经形态计算”, 中国电子学会青年前沿专题论坛, 合肥, 中国, 4月21日, 2019.

  • (Invited) “面向类脑智能的神经形态器件研究”, 双清论坛, 北京, 4/12/2019–4/13/2019.

  • (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, 2nd International Workshop on Future Computing (IWOFC 2018): Devices and Systems for Neuromorphic Computing, Shenzhen, China, December 17–18, 2018.

  • (Invited) “类脑智能芯片发展现状及展望”, 中国集成电路产业促进大会(中国芯大会), 重庆, 中国, 11月8–9日, 2018.

  • (Invited) “Interfacial redox processes in memristive devices based on valence change and electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15–17, 2018.

  • (Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31- Nov 3, 2018.

  • (Invited) “Manipulation of ionic transport properties for synaptic elements with rich functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China, Aug. 31 - Sept. 2, 2018.

  • (Invited) “基于纳米离子栅控的新型神经形态器件研究”, 中国真空学会2018学术年会, 长春, 吉林, 中国, 8月16–19日, 2018.

  • (Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018.

  • (Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05, 2018.

  • (Invited) “Brain-inspired Neuromorphic Devices and Networks as Future Intelligent Edge Computing Platform”, MIT-Wanxiang Congress, Hangzhou, China, 3/22/2018.

  • (Invited) “Brain-inspired Neuromorphic Devices and Networks”, 中国科学院青年创新促进会化学与材料分会2018年学术工作年会暨第二届能源化学与材料国际青年论坛, 2018年4月27日, 宁波.

  • (Invited) “忆阻神经形态器件”, 2018 年“脑与类脑计算前沿”思达论坛(STARS Conference), 西双版纳, 中国, 4月6–9日, 2018.

  • (keynote) “Memristive Devices for Brain Inspired Computing”, 2017年度第二届青年纳米论坛, 2017年10月30日, 北京.

  • (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03-06 2017.

  • (Invited) “Emulation of the human brain by nanodevices at different scales”, China Semiconductor Technology International Conference (CSTIC) 2018, Shanghai, China, Mar. 11-12, 2018.

  • (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.

  • (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.

  • (Invited) “Memristors for Emerging Memory and Computing Applications”, IEEE 12th International Conference on ASIC (ASICON 2017), Guiyang, China, Oct. 25-28, 2017.

  • (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22-24, 2017.

  • (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 1st International Workshop on Future Computing (IWOFC 2017): Memristive Devices and Systems, Beijing, China, September 1-2, 2017

  • (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20-25, 2017

  • (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017

  • (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

  • (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12-13, 2017.

  • (Invited) “Resistive switching dynamics and beyond”, IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, Oct 25-28 2016.

  • (Invited) “Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 27-30 2015.

  • (Invited) “RRAM filament structure and growth dynamics”, China Semiconductor Technology International Conference (CSTIC) 2014, Shanghai, China, Mar 16-17, 2014.


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